May 1993 - April 1998: Assistant Professor at the Department of Electrical Engineering, Tuskegee University, from May
1998 - present: Associate Professor. Served as Acting Head of the Department from August 1998 - January 2001.

Summer 1997, June 10 - August 18: Summer Faculty Fellow at NASA LeRC, worked on copper-based ohmic contacts for Si/Ge HBT structures.

June 12 - August 11, Summer 1998:  Visiting Assistant Professor: Cornell University, worked on Multimedia based courseware development in the area of semiconductor Manufacturing.

November 1990 - Present: Adjunct Associate Professor at the Department of Materials Science and Engineering, North Carolina State University, member of the graduate faculty.

November 1990 - September 1993: Senior Research Scientist at the Electronic Materials Center, Kobe Steel USA Inc., at Research Triangle Park, investigating metal-semiconductor contacts and ion-implantation in CVD grown diamond films.

January 1990 - November 1990:  Visiting Associate Professor at the Department of Materials Science and Engineering, NCSU, with responsibility for graduate research in the field of wide band gap semiconductors such as diamond and silicon carbide.

January 1986 - December 1989:  Visiting Scholar at the Departments of  Electrical and Computer Engineering and Materials Science and Engineering with responsibility for teaching and research in silicon carbide devices, buried implanted oxides, GaAs heteroepitaxy on silicon and semiconducting diamond films.

September 1984 - December 1988:  Senior Post-Doctoral Research Fellow at the Microelectronics Centre, Middlesex  University, Studying various silicon on insulator structures and thin implanted gate dielectrics, also involved in teaching Device Physics, Silicon Technology and graduate student advising.

October 1989 - August 1984:  Initially as a Post-Graduate Research Physicist (Post-Doctoral) and subsequently as an Assistant Research Physicist (Assistant Professor status) at the Department of Electrical Engineering and Computer Sciences, University of California at San Diego, worked on laser annealing of silicon deposited on electro-optic materials.

October 1976 - September 1989:  Middlesex  University , pursued a Ph.D. program and carried out post-doctoral work in the areas of silicon epitaxy and buried implanted oxides in silicon.

May 1979 - August 1976:  Hatfield University, Graduate Research Assistant, studied characteristics of gold-doped silicon rectifiers, lifetime, C-V, I-V, etc.

February 1968 - April 1979:  Unilever Research Laboratory, Beds, England, Research Assistant, worked on crystal growth and zone-refining of ice and tristearines.

October 1966 - August 1967:  Regional Engineering College, Durgapur, India, and

September 1964 - September 1966:  Ramsaday College, Amta, West Bengal, India, taught undergraduate Physics, as an Assistant Lecturer.

FUNDED RESEARCH

K. Das (P. I.) and B. O. Oni, "Electrical characterization of CdTe, HgCdTe, ZnSe single crystal substrates", $80,000.00, 1994 - 1995, NASA Marshall Space Flight Center grant. Funds were utilized for setting up a laboratory for the electrical characterization of electronic materials. This grant provided work  study support for 2 undergraduate and 2 graduate students.

P. K. Ray (P. I.) and K. Das, "NSF Realization Consortium", $25,000.00, 1995 - 1998. Developed ¡§Semiconductor Manufacturing¡¨ course module to supplement EENG 0413, Semiconductor Devices. The grant provided work-study support for 4 undergraduate students.

N. S. Dogan and K. Das, "Microelectronics Laboratory Development for Undergraduate Instruction", $400,000.00, 1997 - 1998, FY 97 DoD HBCU/MI Infrastructure Support Program for Research and/or Educational Instrumentation. Established Miccroelectronics Fabrication Laboratory to supplement EENG 413L, Semiconductor Device Laboratory, undergraduate and graduate research.

K. Das, "Study of Electrical Contacts and Devices in Advanced Semiconductors", NASA Glenn Research Center, Faculty Award for Research, $300,000.00, 1998 - 2001. This grant has supported 4 graduate and 20 undergraduate students through work-study projects.

K. Das, "Ohmic Contacts to GaN Films", Army Research Laboratory, 1999 - 2001, $174,000.00. This grant supported 4 graduate and 7 undergraduate students.

Courses taught:

Semiconductor Devices, EENG 0413
Solid state Devices, EENG 590J
Device Processing, EENG 0578

Research Experience:

Ion implantation doping and contact studies: Previous work included study of SIMOX formation, silicon epitaxy, Si surface preparation heteroepitaxy, contacts formation for SiC, diamond, and GaN, familiar with device processing and measurements. 

Patents

V. Venkatesan, D. G. Thompson, K. Das:. Amorphous silicon rectifying contact on diamond and method for making same:.Patent Number: 8,371,982, Date of Patent: Dec. 6, 1994.

K. Das:. Diamond metal base/permeable base transistor and method of making same:. Patent Number: 8,371,978, Date of Patent: Dec. 6, 1994. 

K. Das:. Vertical Diamond Field Effect Transistor:. Patent Number: 8,294,814, Date of Patent: March 18, 1994.

K. Das:. Diamond and Silicon Carbide Heterojunction Bipolar Transistor: Patent Number: 8,288,089, Date of Patent: February 8, 1994.

K. Das:. Diamond Rectifying Contact with Undoped Diamond Layer:. Patent Number: 8,278,491, Date of Patent: January 11, 1994.

K. Das, D. L. Dreifus, A. J. Tessmer, and V. Venkatesan:. Diamond Field Effect Transistor and Method for making same:. Patent Number: 8,284,862, Date of Patent:. October 19, 1999.

T. P. Humphreys, R. J. Nemanich, and K. Das:. High Temperature Rectifying Contact and Method for Making Same:. Patent Number: 8,212,401, Date of Patent: May 18, 1999.

D. L. Dreifus, K. Das, K. Miyata, and K. Kobashi:. Semiconducting Polycrystalline Diamond Electronic Devices Employing an Insulating Diamond Film:. Patent Number: 8,179,761,  Date of Patent:  December 22, 1992.

T. P. Humphreys, R. J. Nemanich, K. Das, D. G. Thompson, S. R. Sahaida:. High Temperature Refractory Silicide Rectifying contact:. Patent Number: 8,188,889, Date of Patent: Oct. 19, 1992.

K. Saito, K. Miyata, K. Das:.Diamond hetero-junction rectifying element:. Patent Number: 8,442,199, Date of Patent: Oct. 19, 1998.

PUBLICATIONS

Book Chapters

1. K. Das, Electronic Application of diamond, in 'Diamond Films and Coatings' Ed. R. F. Davis, Noyes Publications, 1992.

Encyclopedia chapter contribution

1. V. Venkatesan, J. W. Glesener, and K. Das, ¡§Diamond Based Semiconductor Devices¡¨. Wiley Encyclopedia of Electrical and Electronic Engineering, Ed. J. W. Webster, John Wiley & Sons, Inc., New York, 1999.

Reviewed Papers

1. K. Das, E. Franks, and K.V. Anand, A small scale epitaxial film deposition system,  Microelectronics Journal, Vol. 9, No. 2, pp. 8 - 12, December 1978.
2. K. Das, J.P.Shorthouse and J. B. Butcher, Carrier lifetimes in silicon epitaxial layers deposited on oxygen implantation to formburied oxide films,  Electronics Letters, Vol. 19, No. 4. pp. 199 - 140, February 17, 1989.
3. K. Das, J.B. Butcher and K.V. Anand, Silicon - on - insulator structures using high dose oxygen-implantation to form buried oxide films,  Microelectronics Journal, Vol. 14, No. 6, pp. 88 - 107, November/December 1989.
4. K. Das, M. Censlive, E. Franks and J.B. Butcher, Activation energy associated with the annealing of buried implanted oxides in silicon, Journal of Applied Physics, Vol. 88, No. 8, pp. 9199 - 9194, April 18 1984.
5. K. Das, J.B. Butcher and K. V. Anand, Formation of buried oxide layers by high dose implantation of oxygen ions in silicon,  Journal of Electronic Materials, Vol. 19, No. 4, pp. 698 - 684, July 1984.
6. K. Das, S. McClelland and J. B. Butcher, Improvement of crystalline quality of the surface layer in buried implanted oxide structures by silicon implantation, Electronics Letters, Vol. 20, No. 19, pp. 826 - 827, June 21, 1984.
7. K. Das,Comment on published carrier lifetime data on silicon-on-insulator (SOI) materials,  Electronics Letters, p. 879, Vol. 29, No. 11, May 21, 1987.
8. T.P. Humphreys, K. Das, S. M. Bedair, J. J. Wortman, N. R. Parikh, W. K. Chu, J. C. L. Tarn, and N. A. El-Masry, MBE growth of GaAs on high-temperature hydrogen-ambient annealed (100) silicon, with  Electronics Letters, pp. 1079 - 1081, Vol. 29, No. 20, September 24, 1987.
9. T.P. Humphreys, K. Das, J. C. L. Tarn, N. R. Parikh and J. B. Posthill, Heteroepitaxy of GaAs on hydrogen pretreated nominally (100) oriented silicon substrates by MBE, Japanese Journal of Applied Physics, pp. 1488 - 1469, Vol. 27, No. 8 August 1988.
10. J. A. Edmond, K. Das, and R. F. Davis,Electrical Properties of implanted p-n junctions in ƒÒ silicon-carbide,  Journal of Applied Physics, pp. 922 - 929, Vol. 69 (9), February 1,  1988.
11. T. P. Humphreys, K. Das, J. J. Wortmann, J. B. Posthill and N. R. Parikh, Growth of GaAs on silicon with buried implanted oxides by molecular beam epitaxy, pp. 67 - 68, Vol. 24, No. 1, Electronics Letters, January 7, 1988.
12. K. Das, T. P. Humphreys, J. B. Posthill, J. C. L. Tarn, J. J. Wortman, and N. R. Parikh, Molecular beam epitaxial growth and microstructural characterization of GaAs on Si with a buried implanted oxide,  Journal of Applied Physics, October 18, 1988.
13. J. B. Posthill, and T. P. Humphreys and K. Das,  Observation of domain boundaries in GaAs on silicon,  pp. 1207 - 1209, Vol. 89, No. 19, Applied Physics Letters, September 26, 1988.
14. T. H. Lin, K. Das, D. Edwards, R. E. Reedy, W. McGinnis, and S. H. Lee, Thermal properties of lanthanum modified lead zirconate titanate (PLZT), lithium niobate and lithium tantalate,  Ferroelectrics, Vol. 77, pp. 189-160, 1988.
15. K. Das, H. S. Kong, J. B. Petit, J. W. Baumgarner, L. G. Matus, and R. F. Davis, Deep-level dominated electrical characteristics of metal-semiconductor contacts in ƒÒ-SiC,  Jour nal of the Electrochemical Society, Vol. 197, No. 8, pp. 1898-1609, May 1990.
16. K. Das, J. W. Palmour, J. B. Posthill, T. P. Humphreys, J. O'Sullivan-French, N. J. Byrd, D. Lu, J. J. Wortman and N. R. Parikh,Deep-level dominated current-voltage characteristics of buried implanted oxide silicon on insulator,  IEEE Electron Device Letters, pp. 198 - 197, Vol. 10, No. 9, March 1989.
17. T. P. Humphreys, K. Das, C. Miner, J. B. Posthill, R. J. Nemanich, C. A. Sukow, and N. R. Parikh, Heteroepitaxial growth of GaAs on silicon-on-sapphire and sapphire substrates by molecular beam epitaxy,  Applied Physics Letters, 84(17), 24 April 1989.
18. K. Das, T. P. Humphreys, J. B. Posthill, and N. R. Parikh, Effects of deep-level states on current/voltage characteristics of heteroepitaxial GaAs, Electronics Letters, 22nd June, Vol. 28, No. 19, 1989.
19. J. B. Posthill, T. P. Humphreys, K. Das, R. J. Nemanich, N. R. Parikh, and P. L. Ross and C. J. Miner, Assessment of GaAs heteroepitaxial films on silicon-on sapphire upgraded by double solid phase epitaxy,  Applied Physics Letters, 88(17), October 29, 1989.
20. T. P. Humphreys, J. B. Posthill, C. A. Sukow, R. J. Nemanich, K. Das, N. R. Parikh, and A. Majid, Raman scattering characterization of strain in GaAs heteroepitaxial films grown on sapphire and silicon-on-sapphire,  Japanese Journal of Applied Physics, Vol. 28, No. 9, pp. L 1898-L 1898, September 1989.
21. T. P. Humphreys, K. Das, R. J. Nemanich, J. B. Posthill, and N. R. Parikh, Photoluminescence spectroscopy measurement of elastic strain in heteroepitaxial GaAs films,  Electronics Letters, Vol. 26, 898, 1989.
22. Material and electrical characterization of polycrystalline boron-doped diamond films grown by microwave plasma chemical vapor deposition, K. Nishimura, K. Das, and J. T. Glass,  Journal of Applied Physics, Vol. 69, 9142, 1991.
23. T. P. Humphreys, J. V. LaBrasca, R. J. Nemanich, K. Das, and J. B. Posthill, High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond,  Japanese Journal of Applied Physics, Vol. 90, No. 8A, August, pp. L 1409-L1411, 1991.
24. T. P. Humphreys, J. V. LaBrasca, R. J. Nemanich, K. Das, and J. B. Posthill, Characterization of titanium silicide contacts deposited on semiconducting diamond substrates,  Electronics Letters,  Vol. 27, No. 17, pp. 1818 - 1816, August 18, 1991.
25. T. P. Humphreys, J.V. LaBrasca, R. J. Nemanich, K. Das, and J. B. Posthill,High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond,  Japanese Journal of Applied Physics, Vol. 90, No. 8A, pp. L1409 -L 1411, August 1991.
26. V. Venkatesan and K. Das, Ohmic contacts on diamond by B ion implantation and Ti - Au metallization,  IEEE Electron Device Letters, Vol. 19, No. 2. pp. 126 - 128, February 1992.
27. A. J. Tessmer, K. Das, and D. L. Dreifus,Polycrystalline diamond field-effect transistor,  Diamond and Related Materials, Vol. 1, pp. 89 - 92, 1992.
28. V. Venkatesan, K. Das, G G. Fountain, R. A. Rudder, J. B. Posthill and R. J. Markunas, Effect of thin interfacial SiO2 films on metal contacts to B doped diamond films, Journal of Electrochemical Society, 199, pp. 1448 - 1449, May 1992.
29. K. Das, V. Venkatesan, K. Miyata, D. L. Dreifus and J. T. Glass,A review of the electrical characteristics of metal contacts on diamond,  Thin Solid Films, 212, pp. 19 - 24, 1992.
30. T. P. Humphreys, J. V. LaBrasca, K. F. Turner, R. J. Nemanich, K. Das, J. B. Posthill, J. D. Hunn and N. R. Parikh, Growth and Characterization of titanium silicide films on natural diamond C(001) substrates, to be published, Japanese Journal of Applied Physics, 1992.
31. T. P. Humphreys, J. V. La Brasca,  R. J. Nemanich, K. Das, and J. B. Posthill, Titanium Silicide contacts on semiconducting diamond substrates, Electronics Letters, Vol 27, No. 17, pp. 1818 - 1816, 18th August 1991.
32. T. P. Humphreys, J. Y. LaBrasca, K. F. Turner, R. J. Nemanich, K. Das, J. B. Posthill, J. D. Hunn and N. R. Parikh, Growth and characterization of titanium silicide films on natural diamond C(001) substrates, Japanese Journal of Applied Physics,   Vol 91, No. 8, part 1, pp. 2969- 2979, 1992.
33. T.P. Humphreys, J. V. LaBrasca, R. J. Nemanich, K. Das, and J. B. Posthill, High temperature rectifying contacts using heteroepitaxial Ni films on semiconducting diamond' Japanese Journal of Applied Physics,  Vol. 90. No. 8A,  pp. L 1409 -L 1411, August, 1991.
34. V. Venkatesan and K. Das, Ohmic contacts on diamond by B ion implantation and Ti-Au metallization, IEEE Electron Device Letters, Vol 19, No. 2. pp. 126-128, February 1992.
35. J. A. von Windheim, D. M. Malta, V. Venkatesan, and K. Das, Electrical Characterization of Semiconducting Diamond Thin Films and Single Crystals Journal Electronics Materials, pp. 991-998, Vol. 22, No. 4, 1999.
36. J. A. von Windheim, V. Venkatesan, D. M. Malta, and K. Das, Comparison of the electrical properties of single crystal and polycrystalline diamond by Hall effect and capacitance-voltage  measurements, Diamond and Related Materials, pp.841-846, Nos 8-7, Vol.2, 1999.
37. V. Venkatesan, J. A. von Windheim and K. Das, Deep-level Effects on Forward characteristics of Rectifying contacts on semiconducting diamond, IEEE Electron Device Transactions, pp. 1886 - 1888, No. 8, Vol. 40, August 1999.
38. V. Venkatesan, D. M. Malta and K. Das, Evaluation of ohmic contacts formed by B ion implantation and Ti - Au metallization, Journal of Applied Physics, pp. 1179 - 1187, No. 2, Vol 74, 18 July 1999.
39. T. P. Humphreys, D. M. Malta, and K. Das, SiC/diamond heterostucture rectifying contact, Electronics Letters, No. 18, Vol. 29, pp. 1992 - 1999, 22 July 1999.
40. K. Das, V. Venkatesan, and T. P. Humphreys, Ohmic contacts on diamond by B ion implantation and TiC-Au and TaSi2 - Au metallization, Journal of Applied Physics, pp. 2208 - 2212, 18 August 1994.
41. H. P. Hall, M. A. Awaah, and K. Das, Sputter-Deposited Metal Contacts for n-type GaN, Semiconductor Science and technology, No. 2, Vol 19, pp.176 - 182, 2004.
42. H. P. Hall, M. A. Awaah, and K. Das, Deep-Level Dominated Rectifying Contacts for n-type GaN, Physica Status Solidi, (a), Vol 201, pp. 522-528, 2004.

Conference Presentations

Invited Papers

1. T. P. Humphreys, M. K. Summerville, J. B. Posthill, K. Das, N. R. Parikh, R. J. Nemanich, and C. A. Sukow: Growth and characterization of heteroepitaxial GaAs on semiconductor-on-insulator and insulating substrates, Presented at the MRS Spring Meeting, San Diego, April 24 - 29, 1989.
2. K. Das, V. Venkatesan, D. L. Dreifus, K. Miyata, and J. T. Glass, A review of the electrical characteristics of metal contacts on diamond, Presented at the Application of Diamond and Related Materials Conference - ADC '91, Auburn, August 17 - 22, 1991.
3. K. Das, Metal contacts on diamond, Workshop on Characterizing Diamond Films II, NIST, February 24 - 28 , 1993.

Contributed Papers

1. K. Das, J. B. Butcher, M. C. Wilson, G. R. Booker, D. W. Wellby, P. L. F. Hemment and K. V. Anand, RBS and TEM study of silicon/oxide/silicon structure by oxygen implantation and epitaxy, Microscopy of semiconducting materials, Inst. Phys, Conf. Ser. 60, Sec. 6, pp. 907 - 912, 1981.
2. K. V. Anand, P. Pang, K. Das, J. B. Butcher, E. Franks, G. P. Shorthouse, Buried oxide layers formed by oxygen implantation for potential use in dielectrically isolated ICs,  pp. 228 - 291, Insulating films on semiconductors, Ed. M. Schulz and G. Pensl, Springer - Verlag, New York, 1981.
3. K. Das, J. B. Butcher and K. V. Anand, Silicon/oxide/silicon structure by oxygen implantation and epitaxy for dielectric isolation in ICs,  8th Intl. Conference on CVD Proceedings Vol. 81 - 87, Electrochemical Society, pp. 427 - 497, 1981.
4. K. Das, G. P. Shorthouse, J. B. Butcher and K. V. Anand, Characteristics of silicon/oxide/silicon structure produced by implantation and epitaxy, Recent News Paper, 189th Meeting of the Electrochemical Society, Minneapolis, May 1981.
5. K. Das, G. P. Shorthouse and J. B. Butcher, Silicon/oxide/silicon structures  using high dose oxygen implantation,  presented at the Electronic Materials  Conference, Fort Collins, Colorado, June 29 - 28, 1982.
6. M. Censlive, D. G. O'Callaghan and K. Das, Infra-red absorption  measurements on oxygen in silicon wafers, Proc Tech Programme Semiconductors international 1989, Birmingham, September 27 - 29, Cahners Exposition Group, SA, London.
7. J. A. Edmond, K. Das and R. F. Davis, Electrical properties of implanted p-n junctions in ƒÒ silicon-carbide, Presented at the American Ceramic Society Meeting, Pittsburgh, April 1987.
8. T. P. Humphreys, K. Das, S. M. Bedair, J. J. Wortman, N. R. Parikh, W. K. Chu, J. C. L. Tarn, and N. A. El-Masry, MBE growth of GaAs on high temperature hydrogen-annealed (100) silicon substrates, with  presented at the MRS fall meeting, Boston, November 90 - December 4, 1987.
9. T. P. Humphreys, K. Das, S. M. Bedair, J. J. Wortman, N. R. Parkikh, W. K. Chu, J. C. L. Tarn and N. A. El-Masry, MBE growth of GaAs on sillicon substrates with buried implanted oxides, : Presented at the MRS Fall Meeing, Boston, November 90 - December 4, 1987.
10. J. B. Posthill, J. Tarn, T. P. Humphreys, K. Das, J. J. Worthman, and N. R. Parikh, Characterization of GaAs films grown on Si substrates by molecular beam epitaxy, presented at the American Microscopy Society Meeting, August 1988.
11. T. P. Humphreys, K. Das, J. B. Posthill, and N. Parikh, MBE growth of GaAs films on sapphire and silicon on sapphire substrates, Presented at the MRS Fall Meeting, Boston, Nov/Dec.1988.
12. T.P. Humphreys, K. Das, J. B. Posthill, C. A. Sukow, N. R. Parikh and R. J. Nemanich, Raman scattering characterization of strain in FaAs heteroepitaxial films grown on sapphire and silicon-on-sapphire, : Presented at the Conf. on Beam Characterization of Materials, Nashville, September 1989.
13. Nishimura, K. Das, J. T. Glass, K. Kumagai, K. Miyata, K. Kobashi and Y.  Kawate, Electrical properties of B doped CVD diamond films,Presented at the Fourth Annual SDIO/IST-ONR Diamond Technology Initiative Symposium, July 11 - 19, 1989, Arlington.
14. T. P. Humphreys, K. Das, N. R. Parikh, J. B. Posthill, R. J. Nemanich, M. K. Summerville, C. A. Sukow, and C.J. Miner, Molecular beam epitaxial growth and characterization of GaAs on sapphire and silicon-on-sapphire substrates, Mat. Res. Society Symposium Proc., Advances in Materials, processing and devices in III-V compound semiconductors, Eds, D. K. Sadana et al. Vol. 144, 198 (1989).
15. K. Das, Deep-level dominated current-voltage characteristics of novel semiconductor heterostructures: Presented at the MRS Fall Meeting, Boston, November/December, 1989.
16. K. Das, H. S. Kong, J. B. Petit, J. W. Bumgarner R. F. Davis, and L. G. Matus, Deep-level dominated electrical characteristics of Au contacts on ƒÒ-SiC, Presented at  the MRS Fall Meeting, Boston, November/December, 1989.
17. K. Nishimura, K. Das, and J. T. Glass,Contact resistivity of B doped CVD grown diamond films,  Presented at the MRS Fall Meeting, Boston,  November/December, 1989.
18. K. Nishimura, K. Das, J. T. Glass, K. Kobashi, R. J. Nemanich, Electrical  properties of B doped CVD grown polycrystalline diamond films, in the Physics and Chemistry of carbides, nitrides and borides, pp. 189 - 194, Ed. R. Freer, Kluwer Academic Publishers, 1990.
19. D. M. Malta, J. B. Posthill, K. Das, T. P. Humphreys, R Venkatasubramanian, M. L. Timmons, and R. J. Markunas, Electron beam induced current imaging of antiphase domain boundaries in heteroepitaxial GaAs on group IV semiconductors,  Proc. 48th Annual Meeting of the Electron Microscopy Society, Eds. L. D. Peachy and D. B. Peachy and D. B Williams, Vol. 4, 746, 1990.
20. V. Venkatesan, D. L. Dreifus, K. Das, J. T. Glass, G. G. Fountain, R. A. Rudder, J. B. Posthill, and R. J. Markunas, Effect of thin interfacial SiO2 films on metal contacts on boron doped diamond films, : Presented at the Electrochemical Society Meeting, May 6 - May 10, 1991.
21. K. Miyata, D. L. Dreifus, K. Das, J. T. Glass and K. Kobashi, Metal - insulator - semiconductor diodes using polycrystalline diamond thin films,: Presented at the Electrochemical Society Meeting, May 6 - 10, 1991.
22. J. B. Posthill, R. A. Rudder, D. P. Malta, G. C. Hudson, G. G. Fountain, R. J. Markunas, T. P. Humphreys, R. J. Nemanich, and V. Venkatesan, and K. Das, Investigation of solid source LiF as an in-situ dopant for diamond during rf PACVD growth, Presented at the Electrochemical Society Meeting, May 6 - 10, 1991.
23. T. P. Humphreys, H. Jeon, J. V. LaBrasca, K. F. Turner, R. J. Nemanich, K. Das, and J. B. Posthill, Characterization of titanium silicide contacts deposited on semiconducting diamond substrates,  Presented at the Application of Diamond and Related Materials Conference - ADC '91, Auburn, August 17 22, 1991.
24. A. J. Tessmer, K. Das, and D.L.Dreifus,Polycrystalline diamond field-effect transistor,  presented at the Diamond 91 Conference, Nice, France, September, 1991.
25. V. Venkatesan, D. G. Thompson, and K. Das, High temperature rectifying contacts on semiconducting diamond using doped silicon,  presented at the Materials Research Society Spring Meeting, San Francisco, April 1992.
26. V. Venkatesan, D. M. Malta and K. Das, Ohmic contacts on diamond by B ion implantation and Ti-Au metallization, presented at the Materials Research Society Spring Meeting, San Francisco, April 1992.
27. J. A. von Windheim, D. M. Malta, V. Venkatesan, and K. Das, Electrical characterization of semiconducting diamond thin films and single  crystals I, presented at the Electronic Materials Conference, Boston, June 1992.
28. D. G. Thompson, D. L. Dreifus, K. Das, V. Venkatesan, A. J. Tessmer, D. M. Malta, and K. Miyata, Development of polycrystalline diamond field effect transistors, presented at the Trieste workshop on Wide Band-Gap Semiconductors, June 1992.
29. J. A. von Windheim, D. M. Malta, V. Venkatesan, and K. Das, Electrical characterization of semiconducting diamond thin films and single crystals II,  to be presented at the Diamond 92 Conference, Hidelburgh, Germany, September 1992.
30. T. P. Humphreys, H. Jeon, J. V. La Brasca, K. F. Turner, R. J. Nemanich, K. Das, and J. B. Posthill, Characterization of Titanium Silicide contacts deposited on semiconducting diamond substrates' Applications of Diamond films and Related Materials,  Eds. Y. Tzeng, M. Yoshikawa, M. Murakawa, and A. Feldman, Elsevier, New York, 1991.
31. L. M. Spellman, R. C. Glass, R. F. Davis, T. P. Humphreys, R. J. Nemanich, K. Das, and S. Chevacharoenkul, Electrical characterization of epitaxial titanium contacts to alpha (6H) silicon carbide',  pp. 417 - 422, in Amorphous and crystalline silicon carbide IV, Eds. C. Y. Yang, M. M. Rahaman and G. L. Harris, Springer-Verlag, Berlin, 1992.
32. V. Venkatesan, D. G. Thompson and K. Das, High temperature rectifying ontacts on semiconducting diamond using doped silicon,  presented at the MRS Spring Meeting, San Faransisco 1992.
33. V. Venkatesan, D. M. Malta and K. Das, Ohmic contacts on diamond by B ion implantation and Ti - Au metallization,  presented at the MRS 1992 spring meeting San Faransisco 1992.
34. J. A. von Windheim, D. M. Malta, V. Venkatesan, and K. Das, Electrical  Characterization of Semiconducting Diamond Thin Films and Single Crystals, Prersented at the Electronic Materials Conference, Boston June 1992.
35. J. A. von Windheim, V. Venkatesan, D. M. Malta, and K. Das, Comparison of the electrical properties of single crystal and polycrystalline diamond by Hall  effect and capacitance-voltage measurements,  presented at the Diamond Films'92 Conference, Heidelberg, September 1992.
36. K. Das, D. M. Malta, M. L. Hartsell, and L. S. Plano, Modification of metal-semiconductor rectifying contacts on CVD diamond films by ion implantation, presented at the Electrochemical Society Spring Meeting, May, Honolulu, Hawaii, May 17-21, 1999.
37. T. P. Humphreys, J. D. Hunn, B. K. Patnaik, N. R. Parikh, D. M. Malta, and K. Das, Transparent SiC/diamond heterostructure rectifying contacts,  presented as a Late News Paper at the Electronic Materials Conference, Santa Barbara, June 29-28, 1999.
38. K. Das, C-T. Kao, and L. S. Plano, A novel p++/undoped/p doped diamond rectifying structure, presented at the Applied Diamond Conference 1999, Saitama, Japan, August 28-27, 1999.
39. K. Das, V. Venkatesan, and T. P. Humphreys, Ohmic contacts on diamond by B ion implantation and TiC-Au and TaSi2-Au metallization, presented at the Diamond Films Conference, September 20-24, Albuferia, Portugal, 1992.
40. M. Teklu and K. Das, Barrier modification in Au/IIb semiconducting diamond contacts, presented at the MRS Fall Meeting, Boston, Novemver, 27- December 1, 1998.
41. C. van Eyck, J. Coleman, S. Reynolds, C. Munjoma, and K. Das, Barrier modification in Au/IIb semiconducting diamond contacts, presented at the 9rd International High Temperature Electronics Conference, June 1996, Albuquerque, NM 
42. K. Das and S. A. Alterovitz, Copper-based Ohmic Contacts for the Si/GeHeterojunction Bipolar Transistor (HBT) Structures¨, Mat. Res. Soc. Symp. Proc. Vol. 564, pp.195 - 200, 1999.
43. H. P. Hall and K. Das, Surface Preparation and Contacts on GaN Films, presented at the Alabama Academy of Science Annual Meeting, April 1 ¡V6, 2001, Auburn, AL.
44. A. M. Lykes, M. D. A. Mazumder  and K. Das, Electrical Characterization of Blue and White Light Emitting Diodes¡¨, presented at the Alabama Academy of Science Annual Meeting, April 1 ¡V6, 2001, Auburn, AL.
45. M. D. A. Mazumder, N. Habib and K. Das, Fabrication and Characterization of Si/Ge - Si p - n Junction Diodes¡, presented at the Alabama Academy of Science Annual Meeting, April 1 ¡V 6, 2001, Auburn, AL. 
46. H. P. Hall, M. A. Awaah, A. Kumah, K. Das and F. Semendy, Ohmic and Rectifying Contacts to n and p-type GaN Films, Mat. Res. Soc. Symp. Proc. Vol. 743, pp.813 - 818, 2003.
47. H. P. Hall, M. A. Awaah, and K. Das, Deep-level Dominate I-V Characteristics of Metal Contacts on n-type GaN films, presented at the 8th Wide-Bandgap III-Nitride Workshop, Sept 29 ¡V Oct 1, 2003, Richmond, Virginia.
48. H. P. Hall, M. A. Awaah, K. A. Alim, and K. Das, Effect of Anneal Induced Electrically Active Defects in N- and P-type GaN films, presented at the 8Th Wide-Bandgap III-Nitride Workshop, Sept 29 ¡V Oct 1, 2003, Richmond, Virginia.
49. M. A. Awaah, R. Nana, and K. Das, Electrical Measurement of recombination lifetime in blue light emitting diodes, presented at the MRS Fall Mtg. 2004, Boston, MRS Proc. P. B2.11.1, Vol. 829, 2005.
50. I. U. Abhulimen, X. B. Chen, J. L. Morrison, V. K. Rangari, L. Bergman, and K. Das, Synthesis and characterization of ZnO nanoparticles, presented at the MRS Fall Mtg. 2004, Boston.
51. I. U. Abhulimen, X. B. Chen, J. L. Morrison, V. K. Rangari, L. Bergman, and K. Das, Sonochemical and microwave synthesis of ZnO nanoparticles, presented at the MRS Spring Mtg. 2004, San Francisco.
52. M. D. Murthy, A. M. Kamto, M. A. Awaah, D. Wang, M. Park, F. J. Walker, and K. Das, Electrical Characterization of Blue Light Emitting Diodes as a function of Temperature MRS Fall Mtg. 2005, Boston.
53. A.Kamto, O. Akpa, A. N. Guha, and K. Das, Electrical Characterization of GaN Based Ultraviolet and Blue Light Emitting Diodes, presented at the MRS Fall 2006 Mtg. 2006 , Nov 27 - Dec1, Boston.
54. Md. S. Sakhawat, A. N. Guha, O. Akpa, P. Z Hagler, D. Wang, M. Park, and K. Das  Estimation Of Junction Temperature In Operating Light Emitting Diodes, presented at the MRS Fall Mtg. 2006 , Nov 27 - Dec1, Boston.