Dr. Kalyan K. Das
Kalyan K. Das, Ph.D.
Department of Electrical Engineering,
Phone: 334 727 8994
Fax: 334 724 4806
1982, Ph. D. (Microelectronics), Middlesex University, London, England.
Electronic Materials, Solid State Device Physics and Technology, High Temperature Devices
K. Das, J. B. Butcher and K.V. Anand, Formation of buried oxide layers by high dose implantation oxygen ions in silicon, Journal of Electronic Materials, Vol. 13, No. 4, pp. 635-654, JLIIV 1984.
K. Das, H. S. Kong, J. B. Petit, J. W. Baumgarner, L.G. Matus, and R. F. Davis, Deep-level dominated electrical characteristics of metal-semiconductor contacts in B -SiC, Journal of Electrochemical Society, Vol. 137, No. 5, pp. 1598 1603, May 1990.
T. P. Humphreys, K. Das, J.C. L. Tarn, N.R. Parikh and J.B. Posthill, Heteroepitaxy of Gas on hydrogen pretreated nominally (100) oriented silicon substrates by MBE, Japanese Journal of Applied Physics. pp. 1458-1463, Vol. 27, No. 8, August 1988.
V. Venkatesan and K. Das, Ohmic contacts on diamond by B ion implantation and Ti - au metallization, IEEE Electron Device Letters. Vol. 13, No. 2. pp. 126-128, February 1992.
K. Das, Electronic Application of diamond in ‘Diamond Films and Coatings' Ed. R.F. Davis, Noyes Publications 1992.
K. Das, Diamond Rectifying Contact with Undoped Diamond Layer; Patent Number: 5,278,431, Date of Patent: January 11, 1994.
K. Das, Diamond and Silicon Carbide Heterojunction Bipolar Transistor, Patent Number: 5,285,089, Date of Patent: February 8, 1994.
K. Das, Vertical Diamond Field Effect Transistor, Patent Number: 5,294,814, Date of Patent: March 15, 1994.
K. Saito, K. Miyata, and K. Das: Diamond Heterojunction Rectifying Element, Patent Number 5,442,1999, Date of Patent: April 15, 1995.
K. Das, V. Venkatesan and T.P. Humphrey, Ohmic Contacts on Diamond by B Ion Implantationand TiC- Au and TaSi2 -Au Metallization, Journal of Applied Physics, pp. 2208-2212, August 15, 1994.